André Chanthbouala, Arnaud Crassous, Vincent Garcia, Karim Bouzehouane, Stéphane Fusil, Xavier Moya, Julie Allibe, Bruno Dlubak, Julie Grollier, Stéphane Xavier, Cyrile Deranlot, Amir Moshar, Roger Proksch, Neil D. Mathur, Manuel Bibes and Agnés Barthélémy
Nature Nanotechn. 7, 101 (2012)
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| Ferroelectric switching versus resistive switching. a,b, Out-ofplane PFM phase (a) and amplitude (b) measurements on a typical gold/cobalt/BTO/LSMO ferroelectric tunnel junction. c, R(Vwrite) for a similar capacitor measured in remanence (Vread¼100 mV) after applying successive voltage pulses of 100 ms. The open and filled circles represent two different scans to show reproducibility. |
Nanoelectronics: Ferroelectric devices show potential.
Adrian M. Ionescu
Nature Nanotechn. 7, 83 (2012)
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| The ferroelectric tunnel junction as a non-volatile memory cell. |
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