GMR manipulation with multiferroics

Room Temperature Electrical Manipulation of Giant Magnetoresistance in Spin Valves Exchange-Biased with BiFeO3.
Julie Allibe, Stéphane Fusil, Karim Bouzehouane, Christophe Daumont, Daniel Sando, Eric Jacquet, Cyrille Deranlot, Manuel Bibes, and Agnès Barthélémy
Nano Lett. 12, 1141 (2012)

Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the GMR effect of spin valves deposited on top of BiFeO₃-based heterostructures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109° domain walls and propose solutions toward a reversible process.