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| (a), (d), and (g) Current vs time measurements performed on the three particles. Each particle was examined at a different temperature (indicated on the figure). In the case of particle 3, the graph shown is one of five consecutive measurements. (b), (e), and (h) Constant current STM topography images of the three particles. (c), (f), and (i) Height profiles of the measured particles, which are marked by arrows. |
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| AMR spectra measured on a disk shaped sample for (a) up (p=+1) and (b) down (p=−1) polarization of the vortex core for an excitation current of 1.2 mA. The sample design is shown in the inset of (a). By applying a rotating current (counterclockwise or clockwise) the VC polarity can be switched selectively to up or down. A sign change of the AMR voltage signal can be observed for the two polarities. Note that a significant shift of the resonance frequency to higher frequencies is observed at larger bias fields. Also note that the fine structure observed in the spectra does not depend on the VC polarity. |
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| Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the GMR effect of spin valves deposited on top of BiFeO3-based heterostructures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109° domain walls and propose solutions toward a reversible process. |
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| Logarithmic conductance as a function of T ^1/2 for the core–shell nanoparticles. Inset: sketch of the spin-polarized tunneling between two neighboring core–shell particles where the shells act as a tunneling barrier. |
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| XMCD photoelectron emission microscopy asymmetry images of L10-ordered FePd (a) and FePt (b) taken at the Fe L3-absorption edge for the demagnetized domain state at room temperature and in zero magnetic field. The insets to the upper right corner show the result of micromagnetic simulations. |
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| (a) Resistance change Delta R due to 20DWs in a Pt=Co=Pt strip as a function of Ga dose. (b) Perpendicular anisotropy as a function of Ga dose. The red line is an exponential fit. (c) Normalized DW resistivity as a function of anisotropy. The red line is the theoretical result of the Levy-Zhang model . The same data are plotted in (d) as a function of DW width, showing the 1=Delta^2 dependence. |
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| A spin-valve-like signal in the NiFe/IrMn(1.5 nm)/MgO/Pt AFM tunnel device compared with the weak magnetoresistance of an FM NiFe/MgO/Pt tunnel junction. |
