Antiferromagnetic spintronics: Review

Antiferromagnetic spintronics.
T. Jungwirth, X. Marti, P. Wadley, J. Wunderlich
Nature Nanotechnology 11, 231 (2016)

a, Left: Schematic of atoms on a surface coupled antiferromagnetically with exchange energy J. Surface-induced magnetic anisotropy fields cause the spins of the atoms to align parallel to the easy magnetic axis D. A spin-polarized scanning tunnelling microscopy (STM) tip reads and writes the magnetic state of the structure. Right: Spin-polarized STM images of a linear chain of eight Fe atoms. Spins are in the Néel state 0 (top) or 1 (bottom). b, Left: Optical microscopy image of the solid-state memory device fabricated from a CuMnAs antiferromagnet and schematic of the electrical writing and readout geometry. Right: Change in the transverse resistance, R⊥, after applying three successive 50 ms writing pulses of amplitude J_write = 4 × 10⁶ A cm⁻² alternately along the [100] crystal direction of CuMnAs (black arrow in left panel and black points in right panel) and the [010] axis (red arrow in left panel and red points in right panel).

Opportunities at the Frontiers of Spintronics

Opportunities at the Frontiers of Spintronics.

Axel Hoffmann and Sam D. Bader

Phys. Rev. Applied 4, 047001 (2015)

Schematics of (a) a vortexlike (Bloch) and (b) a hedgehoglike (Néel) magnetic skyrmion structure. The vortexlike skyrmions are typical for skyrmions generated by bulk (c) chiral Dzyaloshinskii-Moriya interactions, such as in B20 compounds, while the hedgehoglike skyrmions are generally stabilized from interfacial (d) chiral Dzyaloshinskii-Moriya interactions.

Nanomagnonics around the corner

Spintronics: Nanomagnonics around the corner

Dirk Grundler

Nature Nanotechnology 11, 407 (2016)

Reconfigurable magnonic conduits realized in domain walls: a, Spin wave of wavevector k propagating in a domain wall between two magnetic domains (top view). Spins precess at their given position (red arrows); electrons do not flow. The white arrows indicate magnetization vectors, M. b, A magnetic field, H, shifts the spin-wave nanochannel because a domain of magnetization, M, grows at the expense of the other domain. Magnetic volume charges are indicated by plus and minus signs.

Magnetoelectric Devices for Spintronics: Review

Magnetoelectric Devices for Spintronics.
S. Fusil, V. Garcia, A. Barthélémy, and M. Bibes

Annual Review of Materials Research 44, 91 (2014)

Examples of magnetic and spintronic properties that can be controlled by an electric field. DOS denotes density of states.

Spin precession in spin current

Towards coherent spin precession in pure-spin current.
Hiroshi Idzuchi, Yasuhiro Fukuma & YoshiChika Otani
Scientific Reports 2, 628 (2012)

(a) Schematic diagram of lateral spin valve with dual injectors in non-local measurement configuration. (b) Schematic diagram of LSV with single injector and the spatial variation of spin accumulation δμ for Ag.  (c), (d) Schematic diagram of LSV with dual injectors with parallel or anti-parallel configuration and the spatial variation of spin accumulation δμ for Ag.

Magnetic DW Injector

Highly Efficient In-Line Magnetic Domain Wall Injector.
Timothy Phung, Aakash Pushp, Luc Thomas, Charles Rettner, See-Hun Yang, Kwang-Su Ryu, John Baglin, Brian Hughes, and Stuart Parkin

Nano Letters 15, 835 (2015)

We demonstrate a highly efficient and simple scheme for injecting domain walls into magnetic nanowires. The spin transfer torque from nanosecond long, unipolar, current pulses that cross a 90° magnetization boundary together with the fringing magnetic fields inherently prevalent at the boundary, allow for the injection of single or a continual stream of domain walls. Remarkably, the currents needed for this “in-line” domain wall injection scheme are at least one hundred times smaller than conventional methods.

Perpective on Nanoferronics

Nanoferronics is a winning combination.
Manuel Bibes
Nature Mater.11, 354 (2012)

Interplay between ferroelectricity and magnetism at different kinds of interface. Depending on the direction of the ferroelectric polarization, a magnetic property is modified in the adjacent material. a, Controlling the Curie temperature across an interface. b, Turning magnetism on and off. c, Altering the spin polarization of electrons. d, Changing exchange coupling between magnetic layers.

Spintronics Insight special at Nature Materials

This is a must, one of the essential entries of the year.
Spintronics insight : Nature Materials, Full pdf version

Including the following articles:

New moves of the spintronics tango.
Jairo Sinova and Igor Žutić

Current-induced torques in magnetic materials.
Arne Brataas, Andrew D. Kent and Hideo Ohno  

Spin Hall effect devices.
Tomas Jungwirth, Jörg Wunderlich and Kamil Olejník

Spin caloritronics.
Gerrit E. W. Bauer, Eiji Saitoh and Bart J. van Wees

Silicon spintronics.
Ron Jansen

Spintronics and pseudospintronics in graphene and topological insulators.
Dmytro Pesin and Allan H. MacDonald

Spin thermoelectric effects

Spin Caloritronics: Electron spins blow hot and cold.
Sebastian T. B. Goennenwein and Gerrit E. W. Bauer
Nature Nanotech. 7, 145 (2012)

Thermoelectrics with a spin.

Direct observation of the spin-dependent Peltier effect.
J. Flipse, F. L. Bakker, A. Slachter, F. K. Dejene and B. J. vanWees
Nature Nanotech. 7, 166 (2012)

Concept of the spin-dependent Peltier effect. a) A pure spin current is sent through a non-magnetic metal (N)/ferromagnetic metal (F) interface. In N, the Peltier heat current for both spin species is equal. As the flow direction in the two spin channels is opposite, the total heat current is cancelled. In F, the heat currents are different for majority and minority carriers, leading to a net heat current from the interface into F or vice versa. b), Generated temperature profile in the system. Spin relaxation in F reduces the spin current, thereby decreasing the induced heat current.

Charge and spin currents resulting from thermal gradient

Local Charge and Spin Currents in Magnetothermal Landscapes.
Mathias Weiler, Matthias Althammer, Franz D. Czeschka, Hans Huebl, Martin S. Wagner, Matthias Opel, Inga-Mareen Imort, Günter Reiss, Andy Thomas, Rudolf Gross, and Sebastian T. B. Goennenwein
Physics 5, 29 (2012)

Spin-Heat Vision
Roberto Myers, Joseph Heremans
Physics 5, 29 (2012)

(a) The scannable laser beam generates a local temperature gradient rT normal to the ferromagnetic thin film plane. The dc voltage VANE which arises due to the anomalous Nernst effect depends on the local magnetization M at the position ðx; yÞ of the laser beam. All investigated samples are patterned into 80 microm wide and 900 microm long Hall bars with contacts abeled as sketched. (b) VANE determined between contacts 2 and 4 as a function of the laser-spot position (x; y)and the external magnetic field magnitude H in a 50 nm thickCo2FeAl (CFA) film.

Thermoelectric effects in spintronics

Magnon-drag thermopile.
Marius V. Costache, German Bridoux, Ingmar Neumann, and Sergio O. Valenzuela
Nature Mater. 11, 199 (2012)

Magnon-drag detection principle and geometry of the device.

Proximity effects in topological insulators

Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators.
Ivana Vobornik,Unnikrishnan Manju, Jun Fujii, Francesco Borgatti, Piero Torelli, Damjan Krizmancic, Yew San Hor, Robert J. Cava, and Giancarlo Panaccione
Nano Letters 11, 4079 (2011)

Mn and Fe XMCD hysteresis loops vs temperature for Fe (black) and Mn (red).

Spintronics with molecular nanomagnets

Graphene Spintronic Devices with Molecular Nanomagnets.
Andrea Candini, Svetlana Klyatskaya, Mario Ruben, Wolfgang Wernsdorfer, and Marco Affronte
nl2006142 (application/pdf Object)

Spintronics for atoms as logic gates

Realizing All-Spin-Based Logic Operations Atom by Atom.
Alexander Ako Khajetoorians, Jens Wiebe, Bruno Chilian, Roland Wiesendanger
Science 332, 1062 (2011)
Science 332, 1039 (2011), Perspectives

 

Spin pumping by excited magnons

Spin Pumping by Parametrically Excited Exchange Magnons. 
C. W. Sandweg, Y. Kajiwara, A. V. Chumak, A. A. Serga, V. I. Vasyuchka, M. B. Jungfleisch, E. Saitoh, and B. Hillebrands
Phys. Rev. Lett. 106, 216601 (2011)

Viewpoint: Spin-magnon transmutation.
Gerrit E. Bauer, Yaroslav Tserkovnyak
Physics.4.40 (2011)

Generation of a magnon  by the spin-transfer torque.

DW motion by Rashba effect

Fast current-induced domain-wall motion controlled by the Rashba effect.
Ioan Mihai Miron, Thomas Moore, Helga Szambolics, Liliana Daniela Buda-Prejbeanu, Stéphane Auffret, Bernard Rodmacq, Stefania Pizzini, Jan Vogel, Marlio Bonfim, Alain Schuhl and Gilles Gaudin.
Nature Mater.10, 419 (2011)

Effects of magnetic field and electric current on DWs.

Spin valve MR induced by an AFM

A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction.
B. G. Park1, J.Wunderlich, X. Martí, V. Holý, Y. Kurosaki, M. Yamada, H. Yamamoto,
A. Nishide, J. Hayakawa, H. Takahashi1, A. B. Shick and T. Jungwirth.
Nature Mater. 10, 347 (2011), News & Views: Nature Mater. 10, 344 (2011)  

A spin-valve-like signal in the NiFe/IrMn(1.5 nm)/MgO/Pt AFM tunnel device compared with the weak magnetoresistance of an FM NiFe/MgO/Pt tunnel junction.