T. Jungwirth, X. Marti, P. Wadley, J. Wunderlich
Nature Nanotechnology 11, 231 (2016)
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| a, Left: Schematic of atoms on a surface coupled antiferromagnetically with exchange energy J. Surface-induced magnetic anisotropy fields cause the spins of the atoms to align parallel to the easy magnetic axis D. A spin-polarized scanning tunnelling microscopy (STM) tip reads and writes the magnetic state of the structure. Right: Spin-polarized STM images of a linear chain of eight Fe atoms. Spins are in the Néel state 0 (top) or 1 (bottom). b, Left: Optical microscopy image of the solid-state memory device fabricated from a CuMnAs antiferromagnet and schematic of the electrical writing and readout geometry. Right: Change in the transverse resistance, R⊥, after applying three successive 50 ms writing pulses of amplitude Jwrite = 4 × 106 A cm−2 alternately along the [100] crystal direction of CuMnAs (black arrow in left panel and black points in right panel) and the [010] axis (red arrow in left panel and red points in right panel). |
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