Magnetoelectric Devices for Spintronics: Review

Magnetoelectric Devices for Spintronics.
S. Fusil, V. Garcia, A. Barthélémy, and M. Bibes

Annual Review of Materials Research 44, 91 (2014)

Examples of magnetic and spintronic properties that can be controlled by an electric field. DOS denotes density of states.

Toroidocaloric effect

Thermodynamics of ferrotoroidic materials: Toroidocaloric effect
Teresa Castán and Antoni Planes, Avadh Saxena
e144429 (application/pdf Object)

Toroidocaloric effect as a function of temperature and selected values of the applied toroidal field, κ = 0.90,1.0, and 1.05.

Perpective on Nanoferronics

Nanoferronics is a winning combination.
Manuel Bibes
Nature Mater.11, 354 (2012)

Interplay between ferroelectricity and magnetism at different kinds of interface. Depending on the direction of the ferroelectric polarization, a magnetic property is modified in the adjacent material. a, Controlling the Curie temperature across an interface. b, Turning magnetism on and off. c, Altering the spin polarization of electrons. d, Changing exchange coupling between magnetic layers.

GMR manipulation with multiferroics

Room Temperature Electrical Manipulation of Giant Magnetoresistance in Spin Valves Exchange-Biased with BiFeO3.
Julie Allibe, Stéphane Fusil, Karim Bouzehouane, Christophe Daumont, Daniel Sando, Eric Jacquet, Cyrille Deranlot, Manuel Bibes, and Agnès Barthélémy
Nano Lett. 12, 1141 (2012)

Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the GMR effect of spin valves deposited on top of BiFeO₃-based heterostructures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109° domain walls and propose solutions toward a reversible process.

Ferroelectric memories

Inside story of ferroelectric memories.
Vincent Garcia and Manuel Bibes
483279a.pdf (application/pdf Object)

See also the previous entry: Ferroelectric solid state memories

Binary and multilevel data storage. a, In a classical binary ferroelectric random access memory (FERAM), a bit of information, with a logic value of ‘1’ or ‘0’, is encoded in the up (red block) or down (blue block) polarization direction of the device’s constituent cells. In this 36-bit example, the bits are stored in 6 × 6 cells, each of which stores one bit. Electrical wires (grey) are used to apply voltages across the cells to write and read the cells’ polarization. b, Lee et al.3 describe a multilevel FERAM that can store three bits in a single cell. In this way, three-bit logic states (000, 001, 010, 011, 100, 101, 110 and 111) can be stored in each of 3 × 4 cells of a smaller 36-bit memory array. Each state corresponds to a specific configuration of domains of opposite polarization in the cells.

Review on Domain wall nanoelectronics

Domain wall nanoelectronics.
G. Catalan, J. Seidel, R. Ramesh, J. F. Scott
Rev. Mod. Phys. 84, 119 (2012)

Ferroelectric ‘‘closure stripes’’ predicted by atomistic simulations of ultrathin films.

Ferroelectric solid state memories

Solid-state memories based on ferroelectric tunnel junctions.
André Chanthbouala, Arnaud Crassous, Vincent Garcia, Karim Bouzehouane, Stéphane Fusil, Xavier Moya, Julie Allibe, Bruno Dlubak, Julie Grollier, Stéphane Xavier, Cyrile Deranlot, Amir Moshar, Roger Proksch, Neil D. Mathur, Manuel Bibes and Agnés Barthélémy
Nature Nanotechn. 7, 101 (2012)

Ferroelectric switching versus resistive switching. a,b, Out-ofplane PFM phase (a) and amplitude (b) measurements on a typical gold/cobalt/BTO/LSMO ferroelectric tunnel junction. c, R(Vwrite) for a similar capacitor measured in remanence (Vread¼100 mV) after applying successive voltage pulses of 100 ms. The open and filled circles represent two different scans to show reproducibility.

Nanoelectronics: Ferroelectric devices show potential.
Adrian M. Ionescu
Nature Nanotechn. 7, 83 (2012)

The ferroelectric tunnel junction as a non-volatile memory cell.

DW on ferroelectrics

Dynamics of charged domain walls in ferroelectrics.
M. Y. Gureev, P. Mokrý, A. K. Tagantsev, and N. Setter
ArXiv 1201.6331 (2012)

Zig-zag wall in a parallel plate capacitor. The pressure acting on each segment leads to non-zero force acting on the wall (a).

Toroidal Ferroelectricitity in PbTiO_{3} Nanoparticles

Toroidal Ferroelectricitity in PbTiO_{3} Nanoparticles
M. G. Stachiotti and M. Sepliarsky
Phys. Rev. Lett. 106, 137601 (2011)

(a) Pz polarization mapfor a 20x20x20 nanodot at T ¼ 50 K. (b) Vortexlike structure of the local polarizations in a 20x20x20 nanoparticle. The arrows give the direction of the projected displacement along the yz plane, and the arrow length indicates the projectedmagnitude. (c) Temperature dependence of the modulus of the
toroidal moment for several cubic nanodots.